Description:

The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators. High Collector-Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mALow Collector-Emitter Saturation Voltatge: VCE(sat) = 0. 5V (Max) @ IC = 200mAHigh Power Dissipation: PD = 10W @ TC = +25CModel # NTE190.